Physics-Based Modeling of TID Induced Global Static Leakage in Different CMOS Circuits

摘要

Compact modeling of inter-device radiation-induced leakage underneath thegateless thick STI oxide is presented and validated taking into account CMOStechnology and hardness parameters, dose-rate and annealing effects, anddependence on electric modes under irradiation. It was shown that proposedapproach can be applied for description of dose dependent static leakagecurrents in complex FPGA circuits.